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ADA4817-1ACPZ-R7 Datasheet(PDF) 19 Page - Analog Devices

Part # ADA4817-1ACPZ-R7
Description  Low Noise, 1 GHz FastFET Op Amps
PDF  24 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADA4817-1ACPZ-R7 Datasheet(HTML) 19 Page - Analog Devices

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ADA4817-1/ADA4817-2
Rev. 0 | Page 19 of 24
45
40
35
30
25
20
15
10
5
0
–5
0.1
1
10
100
1000
FREQUENCY (MHz)
G = 63V/V
RL = 100Ω
VS = 10V
VOUT = 6V p-p
Figure 46. Photodiode Preamp Frequency Response
The pole in the loop transmission translates to a zero in the
amplifier’s noise gain, leading to an amplification of the
input voltage noise over frequency. The loop transmission
zero introduced by CF limits the amplification. The noise gain
bandwidth extends past the preamp signal bandwidth and
is eventually rolled off by the decreasing loop gain of the
amplifier. The current equivalent noise from the inverting
terminal is typically negligible for most applications. The
innovative architecture used in the ADA4817-1/ADA4817-2
makes balancing both inputs unnecessary, as opposed to
traditional FET input amplifiers. Therefore, minimizing the
impedance seen from the noninverting terminal to ground at
all frequencies is critical for optimal noise performance.
Integrating the square of the output voltage noise spectral
density over frequency and then taking the square root allows
users to obtain the total rms output noise of the preamp. Table 8
summarizes approximations for the amplifier and feedback and
source resistances. Noise components for an example preamp
with RF = 50 kΩ, CS = 30 pF, and CF = 0.5 pF (bandwidth of
about 6.4 MHz) are also listed.
Table 8. RMS Noise Contributions of Photodiode Preamp
Contributor
Expression
RMS Noise with RF = 50 kΩ, CS = 30 pF, CF = 0.5 pF
RF
57
.
1
4
2 ×
×
×
f
R
kT
F
94 μV
VEN Amp
57
.
1
3 ×
×
+
+
+
×
f
C
C
C
C
C
VEN
F
F
D
M
S
777.5 μV
IEN Amp
57
.
1
2 ×
×
×
f
R
IEN
F
0.4 μV
783 μV (total)



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