TSH690 datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

ELECTRICAL CHARACTERISTICS

Tamb =25

oC, VCC &Vbias = +2.7V, ZL =50

Ω

Parameter

TSH690

Unit

Min.

Typ.

Max.

Supply Current

S21 (Vin = -20dBm, f = 450MHz)

S21 (Vin = -20dBm, f = 900MHz)

Output Power 1dB Compression (f = 450MHz)

dBm

3rd Order Intercept Point (f = 430MHz)

dBm

S12 (Reverse Isolation @ f = 400MHz)

-46

S11 (Input Return Loss @ f = 450MHz)

-10

-15

S11 (Input Return Loss @ f = 900MHz)

-10

Noise Figure @ f = 450MHz

4.5

Noise Figure @ f = 900MHz

5.4

Rth(j-a) Junction Ambient Thermal Resistance For SO8 Package

140

180

oC/W

All parameters with min. or max. figures are 100% tested.

123456

105

120

135

150

Vcc (V)

Tamb (

°C)

Rthmin

Rthmax

RIGHT BEHAVIOUR

DEVICE

OVERSTRESSED

SO8 PACKAGE THERMAL RESISTIVITY

DEFINITION

Rth(j-a)

Junction Ambient Thermal Resistance

Tj (

oC)

Maximum Die Junction Temperature

(~ 150

oC)

Tamb (

oC) Ambient Temperature

Pd (W)

Maximum Dissipated Power

(Pd = 0.75 VCC

• ICC)

REMARKS

The right behaviour is obtained when the follow-

ing equation is fulfilled.

Tj -Tamb =Pd

• Rth(j-a)

TSH690

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