PESD1LIN datasheet(1/11 Pages) NXP

Part #	PESD1LIN

Description	LIN bus ESD protection diode

PDF	11 Pages

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product proﬁle

1.1 General description

PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic

package designed to protect one automotive Local Interconnect Network (LIN) bus line

from the damage caused by ElectroStatic Discharge (ESD) and other transients.

1.2 Features

I ESD protection of one automotive LIN bus line

I Asymmetrical diode conﬁguration ensures an optimized ElectroMagnetic

Immunity (EMI) of a LIN Electronic Control Unit (ECU)

I Due to the integrated diode structure only one very small SOD323 package is needed

I Max. peak pulse power: PPP = 160 W at tp = 8/20 µs

I Low clamping voltage: VCL = 40 V at IPP =1A

I Ultra low leakage current: IRM <1nA

I ESD protection of up to 23 kV

I IEC 61000-4-2, level 4 (ESD)

I IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs

1.3 Applications

I LIN bus protection

I Automotive applications

1.4 Quick reference data

PESD1LIN

LIN bus ESD protection diode

Rev. 02 — 12 November 2008

Product data sheet

Table 1.

Quick reference data

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff voltage

PESD1LIN (15 V)

-

15

V

PESD1LIN (24 V)

-

24

V

Cd

diode capacitance

VR =0V;

f=1MHz

-

1317pF

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