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STP80NF55-08 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP80NF55-08
Description  N-channel 55 V - 0.0065 廓 - 80 A - TO-220 - D2PAK - TO-247 STripFET??Power MOSFET
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP80NF55-08 Datasheet(HTML) 3 Page - STMicroelectronics

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STP80NF55-08 - STB80NF55-08 - STW80NF55-08
Electrical ratings
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
55
V
VGS
Gate- source voltage
±20
V
ID
(1)
1.
Current limited package
Drain current (continuos) at TC = 25 °C
80
A
ID
(1)
Drain current (continuos) at TC = 100 °C
80
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
300
W
Derating factor
2
W/°C
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-247
Rthj-case
Thermal resistance junction-case max
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
35(1)
1.
When mounted on 1 inch2 FR-4 board, 2 oz Cu
62.5
50
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
40
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
1000
mJ



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