IRF830

Page 1

GENERAL DESCRIPTION

FEATURES

This Power MOSFET is designed for low voltage, high

speed power switching applications such as switching

regulators, conveters, solenoid and relay drivers.

‹

Higher Current Rating

‹

‹

Lower Total Gate Charge

‹

Tighter VSD Specifications

‹

Avalanche Energy Specified

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Top View

1

23

D

S

G

N-Channel MOSFET

ORDERING INFORMATION

Part Number

Package

TO-220FP

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain to Current

Continuous

Pulsed (Note 1)

5.0

18

A

Gate-to-Source Voltage

Continue

±20

V

Total Power Dissipation

Derate above 25

96

0.77

W

W/

Single Pulse Avalanche Energy (Note 2)

125

mJ

Operating and Storage Temperature Range

-55 to 150

Thermal Resistance

Junction to Case

Junction to Ambient

JC

JA

1.70

62

/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

300