AT-41535G datasheet(2/5 Pages) AVAGO

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Table 1. Absolute Maximum Ratings [1] at Tc = +25°C

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to the device.

2. T—CASE = 25°C

3. Derate at 8 mW/°C for Tc>87.5°C.

4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.

5. Thermal Resistance is measured using IR Microscopy method.

Table 2. Electrical Specifications at Tc = +25°C, VCE=8V

Notes:

1. For this test, the emitter is grounded.

Symbol

Parameter

Unit

Max Rating

VEBO

Emitter-Base Voltage

1.5

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

Collector Current

Power Dissipation[2]

500

Junction Temperature

°C

150

Tstg

Storage Temperature

°C

-60 to 150

qjc

Thermal Resistance[5]

°C/W

125

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

|S21E|2

Insertion Power Gain; VCE=8V, Ic=25mA

f = 2.0 GHz

f = 4.0 GHz

11.0

5.5

P1dB

Power Output @1dB Gain Compression:

VCE=8V, Ic=25 mA

f = 2.0 GHz

f = 4.0 GHz

dBm

19.0

18.5

G1dB

1 dB Compressed Gain:

VCE=8V, Ic=25 mA

f = 2.0 GHz

f = 4.0 GHz

14.0

9.0

NFo

Optimum Noise Figure:

VCE=8V, Ic = 10 mA

f = 1.0 GHz

f = 2.0 GHz

f = 4.0 GHz

1.30

1.70

3.00

2.0

Gain @ NFo ;

VCE=8V, Ic=10mA

f = 1.0 GHz

f = 2.0 GHz

f = 4.0 GHz

13.0

18.0

14.0

10.0

Gain Bandwidth Product: Ic = 25 mA

GHz

8.0

hFE

Forward Current Transfer Ratio:

VCE=8V, Ic = 10 mA

180

270

ICBO

Collector Cutoff Current: VCB = 8 V

0.2

IEBO

Emitter Cutoff Current: VEB = 1 V

1.0

CcBO

Collector Base Capacitance[1]:

VCB=8V,F=1MHz

0.20

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