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DN3145 Datasheet(PDF) 2 Page - Supertex, Inc

Part # DN3145
Description  N-Channel Depletion-Mode Vertical DMOS FETs
PDF  2 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

DN3145 Datasheet(HTML) 2 Page - Supertex, Inc

  DN3145 Datasheet HTML 1Page - Supertex, Inc DN3145 Datasheet HTML 2Page - Supertex, Inc  
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2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
08/22/02
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*IDRM
@ T
A = 25°C
°C/W
°C/W
TO-243AA
100mA
300mA
1.3W
34
97
100mA
300mA
* I
D (continuous) is limited by max rated Tj.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D increase possible on ceramic substrate.
Thermal Characteristics
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BVDSX
Drain-to-Source
450
V
VGS = -5V, ID = 100µA
Breakdown Voltage
VGS(OFF)
Gate-to-Source OFF Voltage
–1.5
–3.5
V
VDS = 15V, ID= 10µA
∆VGS(OFF)
Change in VGS(OFF) with Temperature
4.5
mV/°CVDS = 15V, ID= 10µA
I
GSS
Gate Body Leakage Current
100
nA
V
GS = ± 20V, VDS = 0V
ID(OFF)
Drain-to-Source Leakage Current
1.0
µAVGS = -5.0V, VDS = Max Rating
1.0
mA
VGS = -5.0V, VDS = 0.8 Max Rating
TA = 125°C
IDSS
Saturated Drain-to-Source Current
120
mA
VGS = 0V, VDS = 15V
R
DS(ON)
Static Drain-to-Source
60
V
GS = 0V, ID = 100mA
ON-State Resistance
∆RDS(ON)
Change in R
DS(ON) with Temperature
1.1
%/°CVGS = 0V, ID = 100mA
GFS
Forward Transconductance
140
m
ID = 100mA, VDS = 10V
CISS
Input Capacitance
120
VGS = -5.0V, VDS = 25V
C
OSS
Common Source Output Capacitance
15
pF
f = 1.0 MHz
CRSS
Reverse Transfer Capacitance
10
t
d(ON)
Turn-ON Delay Time
10
V
DD = 25V,
t
r
Rise Time
15
ns
I
D = 100mA,
td(OFF)
Turn-OFF Delay Time
20
RGEN = 25Ω
t
f
Fall Time
35
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS = -5.0V, ISD = 100mA
trr
Reverse Recovery Time
800
ns
VGS = -5.0V, ISD = 100mA
Notes:
1.
All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
DN3145



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