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DN3525 Datasheet(PDF) 2 Page - Supertex, Inc

Part # DN3525
Description  N-Channel Depletion-Mode Vertical DMOS FETs
PDF  4 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

DN3525 Datasheet(HTML) 2 Page - Supertex, Inc

  DN3525 Datasheet HTML 1Page - Supertex, Inc DN3525 Datasheet HTML 2Page - Supertex, Inc DN3525 Datasheet HTML 3Page - Supertex, Inc DN3525 Datasheet HTML 4Page - Supertex, Inc  
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PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
I
D (continuous)*
I
D (pulsed)
Power Dissipation
θjc
θja
I
DR*IDRM
@ TA = 25°C
°C/W
°C/W
TO-243AA
360mA
600mA
1.6W
15
78
360mA
600mA
* I
D (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D increase possible on ceramic substrate.
DN3525
Electrical Characteristics (@ 25°C unless otherwise specified)
Notes:
1.
All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Souce Breakdown Voltage
250
V
V
GS = -5.0V, ID = 100µA
V
GS(OFF)
Gate-to-Source OFF Voltage
-1.5
-3.5
V
V
DS = 15V, ID = 1.0mA
∆V
GS(OFF)
Change in V
GS(OFF) with Temperature
4.5
mV/°CV
DS = 15V, ID = 1.0mA
I
GSS
Gate Body Leakage Current
100
nA
V
GS = ±20V, VDS = 0V
I
D(OFF)
Drain-to-Source Leakage Current
1.0
µAV
GS = -5.0V, VDS = Max Rating
1.0
mA
V
GS = -5.0V, VDS = 0.8 Max Rating
T
A = 125°C
I
DSS
Saturated Drain-to-Source Current
300
mA
V
GS = 0V, VDS = 15V
R
DS(ON)
Static Drain-to-Source
6.0
V
GS = 0V, ID = 200mA
ON-State Resistance
∆R
DS(ON)
Change in R
DS(ON) with Temperature
1.1
%/°CV
GS = 0V, ID = 200mA
G
FS
Forward Transconductance
225
mg
I
D = 150mA, VDS=10V
C
ISS
Input Capacitance
270
350
C
OSS
Common Source Output Capacitance
20
60
pF
V
GS = -5.0V, VDS = 25V, f =1.0Mhz
C
RSS
Reverse Transfer Capacitance
5.0
20
t
d(ON)
Turn-ON Delay Time
20
ns
V
DD = 25V,
t
r
Rise Time
25
I
D = 150mA,
t
d(OFF)
Turn-OFF Delay Time
25
R
GEN = 25Ω,
t
f
Fall Time
40
V
GS = 0V to -10V
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS = -5.0V, ISD = 150mA
t
rr
Reverse Recovery Time
800
ns
V
GS = -5.0V, ISD = 150mA



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