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DN3535 Datasheet(PDF) 1 Page - Supertex, Inc

Part # DN3535
Description  N-Channel Depletion-Mode Vertical DMOS FETs
PDF  4 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

DN3535 Datasheet(HTML) 1 Page - Supertex, Inc

  DN3535 Datasheet HTML 1Page - Supertex, Inc DN3535 Datasheet HTML 2Page - Supertex, Inc DN3535 Datasheet HTML 3Page - Supertex, Inc DN3535 Datasheet HTML 4Page - Supertex, Inc  
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12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DN3535
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
* Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
** Die in wafer form.
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSX
Drain-to-Gate Voltage
BVDGX
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
55°C to +150°C
Soldering Temperature*
300°C
* Distance of 1.6 mm from case for 10 seconds.
N-Channel Depletion-Mode
Vertical DMOS FETs
Package Option
Ordering Information
BVDSX /RDS(ON)
IDSS
BVDGX
(max)
(min)
TO-243AA*
Die**
350V
10Ω
200mA
DN3535N8
DN3535NW
Order Number / Package
TO-243AA
(SOT-89)
G
D
S
D
Product marking for TO-243AA:
Where *= 2-week alpha date code
DN5S*


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