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TN2425 Datasheet(PDF) 1 Page - Supertex, Inc

Part # TN2425
Description  N-Channel Enhancement-Mode Vertical DMOS FETs
PDF  4 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TN2425 Datasheet(HTML) 1 Page - Supertex, Inc

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11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TN2425
Features
❏ Low threshold
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Option
N-Channel Enhancement-Mode
Vertical DMOS FETs
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature*
300°C
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
TO-243AA
(SOT-89)
G
D
S
D
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Order Number / Package
BV
DSS /RDS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-243AA*
DIE
250V
3.5Ω
1.5A
TN2425N8
TN2425ND
Ordering Information
Low Threshold
Product marking for TO-243AA:
TN4C
where
❋ = 2-week alpha date code


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