2

TP2510

Thermal Characteristics

Package

I

I

Power Dissipation

I

@ T

TO-243AA

-480mA

-2.5A

15

-480mA

-2.5A

† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

-100

V

Gate Threshold Voltage

-1.0

-2.4

V

5.0

I

GSS

Gate Body Leakage

-100

nA

V

Zero Gate Voltage Drain Current

-10

-1.0

mA

ON-State Drain Current

-0.4

-0.6

-1.5

-2.5

V

5.0

7.0

2.0

3.5

Change in R

1.7

Forward Transconductance

300

360

m

C

ISS

Input Capacitance

80

125

C

OSS

Common Source Output Capacitance

40

70

pF

Reverse Transfer Capacitance

10

25

t

d(ON)

Turn-ON Delay Time

10

t

r

Rise Time

15

Turn-OFF Delay Time

20

t

f

Fall Time

15

V

SD

Diode Forward Voltage Drop

-1.8

V

V

Reverse Recovery Time

300

ns

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

A

Ω

Drain-to-Source

Breakdown Voltage

Static Drain-to-Source

ON-State Resistance

V

ns

I

R

f = 1.0 MHz

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

Switching Waveforms and Test Circuit