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VN0550 Datasheet(PDF) 2 Page - Supertex, Inc

Part # VN0550
Description  N-Channel Enhancement-Mode Vertical DMOS FETs
PDF  4 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

VN0550 Datasheet(HTML) 2 Page - Supertex, Inc

  VN0550 Datasheet HTML 1Page - Supertex, Inc VN0550 Datasheet HTML 2Page - Supertex, Inc VN0550 Datasheet HTML 3Page - Supertex, Inc VN0550 Datasheet HTML 4Page - Supertex, Inc  
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VN0550
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
78mA
250mA
1.0W
125
170
78mA
250mA
* I
D (continuous) is limited by max rated Tj.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
VN0550
500
V
V
GS
= 0V, I
D
= 1mA
V
GS(th)
Gate Threshold Voltage
2
4
V
V
GS = VDS , ID = 1mA
∆VGS(th)
Change in V
GS(th) with Temperature
-3.8
-5.0
mV/°CVGS = VDS , ID = 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS = ±20V, VDS = 0V
I
DSS
Zero Gate Voltage Drain Current
10
µAVGS = 0V, VDS = Max Rating
1mA
V
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
100
VGS = 5V, VDS = 25V
150
350
VGS = 10V, VDS = 25V
RDS(ON)
45
VGS = 5V, ID = 50mA
40
60
VGS = 10V, ID = 50mA
∆RDS(ON)
Change in RDS(ON) with Temperature
1
1.7
%/°CVGS = 10V, ID = 50mA
GFS
Forward Transconductance
50
100
m
VDS = 25V, ID = 50mA
C
ISS
Input Capacitance
45
55
C
OSS
Common Source Output Capacitance
8
10
pF
C
RSS
Reverse Transfer Capacitance
2
5
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
10
t
f
Fall Time
10
V
SD
Diode Forward Voltage Drop
0.8
V
V
GS = 0V, ISD = 0.5A
t
rr
Reverse Recovery Time
300
ns
V
GS = 0V, ISD = 0.5A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
mA
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V,
I
D = 150mA,
R
GEN = 25Ω
ns
Ω



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