2SA1257 datasheet(2/2 Pages) KEXIN

Part #	2SA1257

Description	PNP Epitaxial Planar Silicon Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

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Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

IcBO

VCB = -120V , IE =0

-0.1

ìA

Emitter cutoff current

IEBO

VEB =-4V , IC =0

-0.1

ìA

DC current Gain

hFE

VCE =-5V , IC = -10 mA

270

Gain bandwidth product

VCE =-10V , IC = -10 mA

130

MHz

Output capacitance

Cob

VCB = -10V , f = 1MHz

2.4

3.2

Base-emitter voltage

VBE

VCE =-5V , IC =-10 mA

-1.5

Collector-emitter saturation voltage

VCE(sat) IC =-30mA , IB =-3mA

-0.7

Collector-to-base breakdown voltage

V(BR)CBO IC =-10ìA , IE =0

-180

Collector-to-emitter breakdown voltage

V(BR)CEO IC =-1mA , RBE =

-160

Emitter-base breakdown voltage

V(BR)EBO IE =-10ìA , IC =0

-5

Turn-on time

ton

0.15

ìs

Storage time

tstg

0.95

ìs

Fall time

0.15

ìs

2SA1257

hFE Classification

Rank

hFE

120

180

135

270

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