2SA1971 datasheet(1/1 Pages) KEXIN

Part #	2SA1971

Description	Silicon PNP Triple Diffused Type

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Silicon PNP Triple Diffused Type

2SA1971

Features

High voltage: VCE = -400 V

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-400

V

Collector-emitter voltage

VCEO

-400

V

Emitter-base voltage

VEBO

-7

V

Collector current

IC

-0.5

A

Collector current(pulse)

ICP

-1

A

Base current

IB

-0.25

A

500

1000 *

Junction temperature

Tj

150

Storage temperature range

Tstg

-55to+150

* Mounted on ceramic substrate (250 mm

2 X 0.8 t)

mW

PC

Collector power dissipation

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

ICBO

VCB =-400V, IE=0

-10

ìA

Emitter cut-off current

IEBO

VEB=-7V,IC=0

-1

ìA

Collector-emitter breakdown voltage

V(BR)CEO IC=-10mA, IB=0

-400

V

VCE=-5V,IC=-20mA

140

450

VCE=-5V,IC=-100mA

140

400

Collector-emitter saturation voltage

VCE (sat) IC=-100mA,IB=-10mA

-0.4

-1

V

Base-emitter saturation voltage

VBE (sat) IC=-100mA,IB=-10mA

-0.76

-0.9

V

Transition frequency

fT

VCE=-5V,IC=-50mA

35

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

18

pF

Turn-on time

ton

0.2

ìs

Storage time

tstg

2.3

ìs

Fall time

tf

0.2

ìs

hFE

DC current gain

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2SA1971 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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