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2SD1421 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SD1421
Description  Silicon NPN Epitaxial
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1421 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD1421 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
www.kexin.com.cn
Silicon NPN Epitaxial
2SD1421
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
180
V
Collector to emitter voltage
VCEO
160
V
Emitter to base voltage
VEBO
5V
Collector current
IC
1.5
A
Collector peak current
iC(peak)*1
3
A
Collector power dissipation
PC*2
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55to150
*1 PW
10ms, duty cycle
20%
*2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO
IC =1mA, IE = 0
180
V
Collector to emitter breakdown voltage
V(BR)CEO
IC =10mA, RBE =
160
V
Emitter to base breakdown voltage
V(BR)EBO
IE=1mA, IC =0
5
V
Collector cutoff current
ICBO
VCB = 160 V, IE =0
10
ìA
VCE =5V, IC = 0.15A
60
200
VCE =5V, IC =0.5A
30
Collector to emitter saturation voltage
VCE(sat)
IC =0.5A, IB = 50 mA,pulse
1.0
V
Base to emitter voltage
VBE
VCE =5V, IC = 0.15mA,pulse
0.9
V
hFE
DC current transfer ratio
hFE Classification
Marking
ED
EE
hFE
60
120
100
200


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