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KC807 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KC807 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. www.kexin.com.cn PNP Silicon AF Transistors KC807(BC807) Marking NO. KC807-16 KC807-25 KC807-40 Marking 9FA 9FB 9FC hFE 100 250 160 400 250 630 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -800 mA power dissipation PD 310 mW Junction temperature Tj 150 Storage temperature Tstg -65to+150 Electrical Characteristics Ta = 25 Symbol Testconditons Min Typ Max Unit VCBO IC =-10 A,VBE =0 -50 V VCEO IC =-10 mA,IB =0 -45 V VEBO IE =-10 A, IC =0 -5 V Collector cutoff current ICES VCB =-25 V, VBE= 0 -100 nA IEBO VEB =-4V,IC = 0 -100 nA IC =-100mA, VCE = -1 V 100 630 IC =-300mA, VCE =-1V 60 VCE(sat) IC =-500mA, IB =-50 mA -0.7 V VBE(on) VCE=-1V,IC=300mA -1.2 V Output Capacitance Cob VCB=-10V,f=1MHz 12 pF fT IC =-10 mA,VCE =-5V,f=50MHz 100 MHz * Pulsed: PW 350 ìs, duty cycle 2% hFE Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage DC current gain * Base emitter on voltage Transition frequency Collector saturation voltage * Parameter Emitter cutoff current Emitter-to-base breakdown voltage |
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