2

Thermal Characteristics

Package

I

I

Power Dissipation

I

TO-92

-0.1A

-0.3A

1W

125

170

-0.1A

-0.3A

TO-243AA

-0.16A

-0.80A

15

78

-0.16A

-0.80A

†

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

Switching Waveforms and Test Circuit

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

-500

Gate Threshold Voltage

-1.5

-3.5

V

-4.8

I

GSS

Gate Body Leakage

-100

nA

V

Zero Gate Voltage Drain Current

-10

ON-State Drain Current

-75

-200

V

35

30

Change in R

0.75

Forward Transconductance

150

320

m

C

ISS

Input Capacitance

190

C

OSS

Common Source Output Capacitance

75

pF

Reverse Transfer Capacitance

20

t

d(ON)

Turn-ON Delay Time

10

t

r

Rise Time

25

Turn-OFF Delay Time

45

t

f

Fall Time

25

V

SD

Diode Forward Voltage Drop

-1.8

V

V

Reverse Recovery Time

300

ns

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

mA

Drain-to-Source

Breakdown Voltage

Static Drain-to-Source

ON-State Resistance

-1

mA

V

f = 1 MHz

ns

R

Ω

VP2450