MJD31 datasheet(2/2 Pages) KEXIN

Part #	MJD31

Description	Complementary Power Transistors

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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2 / 2 page

SMD Type

Transistors

www.kexin.com.cn

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter sustaining voltage MJD31,MJD32

MJD31C,MJD32C

100

Collector cutoff current

MJD31,MJD32

VCE =40V, IB =0

ìA

MJD31C,MJD32C

VCE =60V, IB =0

ìA

Collector cutoff current

ICES

VCE = Rated VCEO,VEB =0

ìA

Emitter cutoff current

IEBO

VBE =5V, IC =0

IC =1A, VCE =4V

IC =3A, VCE =4V

Collector-emitter saturation voltage *

VCE(sat) IC =3A, IB = 375 mA

1.2

Base-emitter saturation voltage *

VBE(on)IC =3A, VCE =4V

1.8

Current-gain-bandwidth product *2

IC = 500 mA,VCE =10V,ftest = 1 MHz

MHz

Small-signal current gain

hfe

IC =0.5 A, VCE =10V, f = 1kHz

*1 Pulse test: pulse width

300 ìs, duty cycle

2.0%.

*2 fT=

hfe

ftest

IC =30mA, IB =0

DC current gain *

hFE

VCEo(sus)

ICEO

MJD31,MJD31C(NPN)

MJD32,MJD32C(PNP)

hFE Classification

TYPE

MJD31

MJD31C

MJD32

MJD32C

Marking

J31

J31C

J32

J32C

MJD31 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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