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MJD41C Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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MJD41C Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() 2 SMD Type Transistors www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter sustaining voltage VCEo(sus) IC =30mA, IB = 0 100 V Collector cutoff current ICEO VCE =60V, IB =0 50 ìA Collector cutoff current ICES VCE = 100 V,VEB =0 10 ìA Emitter cutoff current IEBO VBE =5V, IC =0 0.5 mA IC =0.3 A, VCE =4V 30 IC =3A, VCE =4V 15 75 Collector-emitter saturation voltage * VCE(sat) IC =6A, IB = 600 mA 1.5 V Base-emitter saturation voltage * VBE(on)IC =6A, VCE =4V 2 V Current-gain-bandwidth product *2 fT IC = 500 mA,VCE =10V,ftest = 1 MHz 3 MHz Small-signal current gain hfe IC =0.5 A, VCE =10V, f =1kHz 20 *1 Pulse test: pulse width 300 ìs, duty cycle 2.0%. *2 fT= hfe ftest DC current gain * hFE hFE Classification TYPE MJD41C MJD42C Marking J41C J42C MJD41C(NPN) MJD42C(PNP) |
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