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2SC3360 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3360 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 www.kexin.com.cn 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 NPN Silicon Epitaxial Transistor 2SC3360 Features High DC current gain.hFE=90 to 450 High voltage VCEO=200V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5V Collector current IC 100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB =200V, IE=0 100 nA Emitter cutoff current IEBO VEB =5V, IC=0 100 nA VCE =10V , IC = 10mA 90 200 450 VCE =10V , IC =50mA 50 200 Base-emitter voltage * VBE VCE =10V , IC = 10mA 0.6 0.64 0.7 V Collector-emitter saturation voltage * VCE(sat) IC =50mA , IB =5mA 0.1 0.3 V Base saturation voltage * VBE(sat) IC =50mA , IB =5mA 0.8 1.2 V Gain bandwidth product fT VCE =10V , IE =-10mA 160 MHz Output capacitance Cob VCB =30V , IE = 0 , f = 1.0MHz 2.8 pF Turn-on time ton IC =10mA, IB1 =-IB2 =1mA, 0.15 ìs Storage time tstg VCC =10V 1.3 ìs Fall time tf VBE(off) = -2.5V 0.3 ìs * Pulse test: tp 350 ìs; d 0.02. DC current gain * hFE hFE Classification Marking N15 N16 N17 hFE 90 180 135 270 200 450 |
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