2SA1330 datasheet(2/2 Pages) KEXIN

Part #	2SA1330

Description	PNP Silicon Epitaxial Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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2 / 2 page

SMD Type

Transistors

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Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB = -200V, IE=0

-100

Emitter cutoff current

IEBO

VEB =-5V, IC=0

-100

VCE =-10V , IC = -10mA

200

450

VCE =-10V , IC = -50mA

195

Base-emitter voltage *

VBE

VCE =-10V , IC = -10mA

-0.6

-0.65

-0.7

Collector-emitter saturation voltage *

VCE(sat) IC =-50mA , IB = -5mA

-0.21

-0.3

Base saturation voltage *

VBE(sat) IC =-50mA , IB = -5mA

-0.8

-1.2

Gain bandwidth product

VCE =-10V , IE =10mA

120

MHz

Output capacitance

Cob

VCB =-30V , IE = 0 , f = 1.0MHz

3.6

Turn-on time

ton

IC =-10mA, IB1 =-IB2 = -1mA,

0.16

ìs

Storage time

tstg

VCC =-10 V

1.3

ìs

Fall time

VBE(off) = 2.5V

0.18

ìs

* Pulse test: tp

350 ìs; d

0.02.

DC current gain *

hFE

hFE Classification

Marking

O5O6O7

hFE

180

135

270

200

450

2SA1330

2SA1330 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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