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BF820 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # BF820
Description  NPN High-Voltage Transistors
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

BF820 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  BF820 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
Transistors
1
www.kexin.com.cn
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
NPN High-Voltage Transistors
BF820,BF822
Features
Low current (max. 50 mA)
High voltage (max. 300 V).
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
IE =0; VCB = 200 V
10
nA
IE =0; VCB = 200 V; Tj = 150
10
ìA
Emitter cutoff current
IEBO
IC =0; VEB =5V
50
nA
DC current gain *
hFE
IC =25mA; VCE =20V
50
collector-emitter saturation voltage
VCEsat
IC =30mA; IB = 5 mA
600
mV
Feedback capacitance
Cre
IC =ic = 0; VCB =30V; f = 1MHz
1.6
pF
Transition frequency
fT
IC =10mA; VCE = 10 V;f= 100 MHz
60
MHz
Collector cutoff current
ICBO
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
BF820
300
V
BF822
250
V
Collector-emitter voltage
BF820
300
V
BF822
250
V
Emitter-base voltage
VEBO
5V
Collector current
IC
50
mA
Peak collector current
ICM
100
mA
Peak base current
IBM
50
mA
Total power dissipation *
Ptot
250
mW
Storage temperature
Tstg
-65to+150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65to+150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
VCEO
VCBO
hFE Classification
TYPE
BF820
BF822
Marking
1V
1X


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