BF821 datasheet(1/1 Pages) KEXIN

Part #	BF821

Description	PNP High-Voltage Transistors

PDF	1 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

1

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0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

PNP High-Voltage Transistors

BF821,BF823

Features

Low current (max. 50 mA)

High voltage (max. 300 V).

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

BF821

-300

V

BF823

-250

V

Collector-emitter voltage

BF821

-300

V

BF823

-250

V

Emitter-base voltage

VEBO

-5

V

Collector current

IC

-50

mA

Peak collector current

ICM

-100

mA

Peak base current

IBM

-50

mA

Total power dissipation *

Ptot

250

mW

Storage temperature

Tstg

-65to+150

Junction temperature

Tj

150

Operating ambient temperature

Ramb

-65to+150

Thermal resistance from junction to ambient *

Rth j-a

500

K/W

* Transistor mounted on an FR4 printed-circuit board.

VCEO

VCBO

hFE Classification

TYPE

BF821

BF823

Marking

1W

1Y

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

IE =0; VCB = -200 V

-10

nA

IE =0; VCB = -200 V; Tj = 150

-10

ìA

Emitter cutoff current

IEBO

IC =0; VEB =-5V

-50

nA

DC current gain

hFE

IC =-25 mA; VCE =-20 V

50

collector-emitter saturation voltage

VCEsat

IC =-30 mA; IB = -5 mA

-800

mV

Feedback capacitance

Cre

IC =ic = 0; VCB = -30 V; f = 1 MHz

1.6

pF

Transition frequency

fT

IC =-10 mA; VCE = -10 V; f = 100 MHz

60

MHz

Collector cutoff current

ICBO

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BF821 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

BF821 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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