4-208

TELCOM SEMICONDUCTOR, INC.

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

TC1426

TC1427

TC1428

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

Logic 1, Input Voltage

3

—

—

V

Logic 0, Input Voltage

—

—

0.8

V

Input Current

0V

– 1

—

1

µA

Output

High Output Voltage

Test Figures 1 and 2

—

—

V

Low Output Voltage

Test Figures 1 and 2

—

—

0.025

V

Output Resistance

—

12

18

Ω

—

8

12

Peak Output Current

—

1.2

—

A

I

Latch-Up Current

Withstand Reverse Current

> 500

—

—

mA

Switching Time (Note 1)

Rise Time

Test Figures 1 and 2

—

—

35

nsec

Fall Time

Test Figures 1 and 2

—

—

25

nsec

Delay Time

Test Figures 1 and 2

—

—

75

nsec

Delay Time

Test Figures 1 and 2

—

—

75

nsec

Power Supply

Power Supply Current

—

—

9

mA

—

—

0.5

Note: 1. Switching times guaranteed by design.

ABSOLUTE MAXIMUM RATINGS*

≤ 70°C)

Plastic DIP ........................................................... 730W

SOIC ................................................................ 470 mW

Derating Factor

Plastic DIP ..................................................... 8 mW/

°C

SOIC .............................................................. 4 mW/

°C

Supply Voltage ............................................................ 18V

Input Voltage, Any Terminal .. (V

Operating Temperature : C Version .............. 0

°C to +70°C

E Version ......... – 40

°C to +85°C

*Stresses above those listed under "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions above

those indicated in the operational sections of the specifications is not

implied. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

Maximum Chip Temperature ................................. +150

°C

Storage Temperature ............................. +65

°C to +150°C

Lead Temperature (Soldering ,10 sec) ................. +300

°C