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1SS306 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1SS306 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Diodes www.kexin.com.cn 1 Unit: mm Silicon Epitaxial Planar Type 1SS306 Features Low forward voltage :VF(2) =0.9 V(Typ) Fast reverse recovery time :trr =30ns(Typ) Small total capacitance :CT =1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Maximum (peak) reverse voltage VRM 250 V Reverse voltage VR 200 V Average forward current * IO 100 mA Maximum (peak) forward current * IFM 300 mA Surge current (10 ms) * IFSM 2A Power dissipation P 150 mW Junction Temperature Tj 125 Storage Temperature Tstg -55 + 125 * Unit rating.Total rating = Unit rating X1.5 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit VF(1) IF = 1 mA 0.72 1.0 VF(2) IF = 100mA 0.9 1.2 IR(1) VR =50V 0.1 IR(2) VR = 200 V 1.0 Total capacitance Ct VR =0,f=1.0 MHz 1.5 3.0 pF Reverse recovery time trr 30 60 ns V Forward voltage Reverse current A Marking Marking A3 |
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