TC4420 datasheet(3/5 Pages) TELCOM

3 / 5 page

4-227

TELCOM SEMICONDUCTOR, INC.

6A HIGH-SPEED MOSFET DRIVERS

TC4420

TC4429

ELECTRICAL CHARACTERISTICS:

Measured over operating temperature range with 4.5V

≤ VDD ≤ 18V,

unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1 High Input Voltage

2.4

—

VIL

Logic 0 Low Input Voltage

—

0.8

VIN (Max)

Input Voltage Range

– 5

—

VDD + 0.3

IIN

Input Current

≤ VIN ≤ VDD

– 10

—

µA

Output

VOH

High Output Voltage

See Figure 1

VDD – 0.025

—

VOL

Low Output Voltage

See Figure 1

—

0.025

Output Resistance, High

IOUT = 10 mA, VDD = 18V

—

Ω

Output Resistance, Low

IOUT = 10 mA, VDD = 18V

—

2.3

Ω

Switching Time (Note 1)

Rise Time

Figure 1, CL = 2500 pF

—

nsec

Fall Time

Figure 1, CL = 2500 pF

—

nsec

tD1

Delay Time

Figure 1

—

100

nsec

tD2

Delay Time

Figure 1

—

100

nsec

Power Supply

Power Supply Current

VIN = 3V

—

0.45

VIN = 0V

—

400

µA

VDD

Operating Input Voltage

4.5

—

NOTE: 1. Switching times guaranteed by design.

Figure 1. Switching Time Test Circuit

INPUT: 100 kHz, square wave,

RISE = tFALL ≤ 10 nsec

INPUT

CL = 2500pF

OUTPUT

0.1

µF

0.1

µF

VDD = 18V

INPUT

90%

10%

+18V

OUTPUT

tD1

+5V

90%

10%

90%

µF

tD2

TC4429

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