2SC3661 datasheet(1/1 Pages) KEXIN

Part #	2SC3661

Description	NPN Epitaxial Planar Silicon Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

NPN Epitaxial Planar Silicon Transistor

2SC3661

Features

Low frequency general-purpose amplifiers, drivers, muting circuit.

Adoption of FBET process.

High DC current gain (hFE=800 to 3200).

Low collector-to-emitter saturation voltage (VCE(sat)

0.5V).

High VEBO (VEBO

15V).

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

30

V

Collector-emitter voltage

VCEO

25

V

Emitter-base voltage

VEBO

15

V

Collector current

IC

300

mA

Collector current (pulse)

Icp

500

mA

Collector dissipation

PC

200

mW

Junction temperature

Tj

125

Storage temperature

Tstg

-55to+125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB = 20V, IE=0

0.1

ìA

Emitter cutoff current

IEBO

VEB = 10V, IC=0

0.1

ìA

DC current gain

hFE

VCE =5V , IC = 10mA

800

1500

3200

Gain bandwidth product

fT

VCE = 10V , IC = 10mA

250

MHz

Output capacitance

Cob

VCB = 10V , f = 1.0MHz

2.7

pF

Collector-emitter saturation voltage

VCE(sat) IC = 200mA , IB = 4mA

0.12

0.5

V

Base-emitter saturation voltage

VBE(sat) IC = 200mA , IB = 4mA

0.85

1.2

V

Collector-base breakdown voltage

V(BR)CBO IC = 10ìA , IE =0

30

V

Collector-emitter breakdown voltage

V(BR)CEO IC =1mA , IB =0

25

V

Emitter-base breakdown voltage

V(BR)EBO IE = 10ìA , IC =0

15

V

Marking

FY

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2SC3661 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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