2SD596 datasheet(1/1 Pages) KEXIN

Part #	2SD596

Description	NPN Silicon Epitaxial Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

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1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

NPN Silicon Epitaxial Transistor

2SD596

Features

Micro package.

High dc current gain. hFE:200TYP. (VCE=1V, IC=100mA)

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

30

V

Collector to emitter voltage

VCEO

25

V

Emitter to base voltage

VEBO

5V

Collector current (DC)

IC

700

mA

Total power dissipation

PT

200

mW

Junction temperature

Tj

150

Storage temperature range

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB =30V, IE = 0

100

nA

Emitter cutoff current

IEBO

VEB =5.0 V, IC = 0

100

nA

DC current gain *

hFE

VCE =1.0 V, IC = 100 mA

110

200

400

Base to emitter voltage *

VBE

VCE =6.0 V, IC = 10 mA

600

640

700

mV

Collector saturation voltage *

VCE(sat) IC = 700 mA, IB = 70 mA

0.22

0.6

V

Output capacitance

Cob

VCB =6.0 V, IE = 0, f = 10 MHz

12

pF

Gain bandwidth product

fT

VCE =6.0 V, IE = -10 mA

170

MHz

* Pulsed: PW

350 ìs, duty cycle

2%

hFE Classification

Marking

Rank

1234

5

hFE

110

180

135

220

170

270

200

320

250

400

DV

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2SD596 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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