2SB1000 datasheet(1/1 Pages) KEXIN

Part #	2SB1000

Description	Silicon PNP Epitaxial

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

1

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Silicon PNP Epitaxial

2SB1000

Features

Low frequency amplifier.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

-25

V

Collector to emitter voltage

VCEO

-20

V

Emitter to base voltage

VEBO

-5

V

Collector current

IC

-1

A

peak collector current

ICP *-1.5

A

Collector power dissipation

PC

1W

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

*PW

10 ms; d

0.02.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector to base breakdown voltage

V(BR)CBO IC =-10 ìA, IE =0

-25

V

Collector to emitter breakdown voltage

V(BR)CEO IC =-1mA, RBE =

-20

V

Emitter to base breakdown voltage

V(BR)EBO IE =-10 ìA, IC =0

-5

V

Collector cutoff current

ICBO

VCB =-20 V, IE =0

-0.1

ìA

Emitter cutoff current

IEBO

VEB =-4V, IC =0

-0.1

ìA

DC current transfer ratio *

hFE

VCE =-2V, IC = -0.5 A

85

240

Collector to emitter saturation voltage *

VCE(sat) IC =-0.8A, IB = -0.08 A

-0.2

-0.3

V

Base to emitter saturation voltage *

VBE(sat) IC =-0.8A, IB = -0.08 A

-0.94

-1.1

V

Gain bandwidth product

fT

VCE =-2V, IC = -0.15 A

200

MHz

Collector output capacitance

Cob

VCB =-10 V, IE = 0 f=1MHz

38

pF

hFE Classification

Marking

AH

AJ

hFE

85

170

120

240

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2SB1000 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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