2SB1122 datasheet(2/2 Pages) KEXIN

Part #	2SB1122

Description	PNP Epitaxial Planar Silicon Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

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Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB = -50V , IE = 0

-100

Emitter cutoff current

IEBO

VCB =-4V , IE = 0

-100

DC current Gain

hFE

VCE =-2V , IC = -100mA

100

560

Gain bandwidth product

VCE = -10V , IC = -50mA

150

MHz

Output capacitance

Cob

VCB = -10V , f = 1MHz

Collector-emitter saturation voltage

VCE(sat) IC = -500mA , IB = -50mA

-180

-500

Base-emitter saturation voltage

VBE(sat) IC = -500mA , IB = -50mA

-0.9

-1.2

Collector-base breakdown voltage

V(BR)CBO IC = -10ìA , IE =0

-60

Collector-emitter breakdown voltage

V(BR)CEO IC =-1mA , RBE =

-50

Emitter-base breakdown voltage

V(BR)EBO IE = -10ìA , IC =0

-5

Turn-on time

ton

Storage time

tstg

300

Fall time

2SB1122

hFE Classification

Marking

Rank

hFE

100 200

140 280

200 400

280 560

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