FMMT4126 datasheet(2/2 Pages) KEXIN

2 / 2 page

www.kexin.com.cn

SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO IC=-10µA,

-25

Collector-emitter breakdown voltage

V(BR)CEO IC=-1mA,

-25

Emitter-base breakdown voltage

V(BR)EBO IE=-10µA,

-4

Collector cutoff current

ICBO

VCE=-20V

-50

Emitter cut-off current

IEBO

VEB=-3V

-50

Collector-emitter saturation voltage *

VCE(sat)

IC=-50mA, IB=-5mA

-0.4

Base-emitter saturation voltage *

VBE(sat)

IC=-50mA, IB=-5mA

-0.95

DC current gain *

hFE

IC=-2mA, VCE=-1V

120

360

Current-gain-bandwidth product

IC=-10mA, VCE=-20V f=100MHz

250

MHz

Output capacitance

Cobo

VCB=-5V, IE=0, f=140KHz

4.5

Input capacitance

Cibo

VBE=-0.5V, IC=0, f=140KHz

Noise figure

VCE=-5V IC=-200µA,Rg=-2K

f=30Hz to 15KHz at -3dB points

4dB

Small signal current transfer

hfe

IC=-2mA, VCE=-1V, f=1KHz

120

180

Delay time

Rise time

Storage time

140

Fall time

* Pulse test: tp

300 ìs; d

0.02.

VCC=-3V, IC=-10mA,IB1=-1mA

VBE(off)=-0.5V

VCC=-3V, IC=-10mA

IB1=IB2=-1mA

FMMT4126

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