1SS123 datasheet(1/1 Pages) KEXIN

Part #	1SS123

Description	SILICON SWITCHING DIODE

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

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1

Diodes

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

SILICON SWITCHING DIODE

1SS123

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Peak Reverse Voltage

VRM

70

V

DC Reverse Voltage

VR

70

V

Peak Reverse Voltage

IFM

200

mA

Average Rectified Current

IO

100

mA

DC Forward Current

IF

100

mA

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 to+ 150

Junction to Ambient*

R

1.0

/mW

Junction to Ambient

R

0.67

/mW

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

IF = 1.0 mA

600

715

IF = 10 mA

750

855

IF = 50 mA

855

1100

IF = 100 mA

900

1300

Reverse current

IR

VR =70V

1.0

A

Capacitance

Ct

VR =0,f=1.0 MHz

2.5

4.0

pF

Reverse recovery time

trr

IF = 100 mA,VR =1V,RL = 100

9.0

ns

Forward recovery voltage

Vfr

IF = 100 mA

1.75

V

mV

VF

Continuous reverse voltage

Marking

A7

Features

Low capacitance: Ct =4.0 pF MAX

High speed switching: trr =9.0 ns MAX.

Wide applications including switching,limitter,clipper.

Double diode configuration assures economical use.

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1SS123 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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