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1SS372 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1SS372 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Diodes 1 Silicon Epitaxial Schottky Barrier Type 1SS372 Features Small package Low forward voltage : VF = 0.23V (typ.) @ IF=5mA Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IF = 1mA 0.18 IF = 5mA 0.23 0.30 IF = 100mA 0.35 0.50 Reverse current IR VR = 10V 20 ìA Total capacitance CT VR = 0, f = 1MHz 20 40 pF V Forward voltage VF Marking Marking N9 1 ANODE 2 CATHODE 3 CATHODE/ANOD www.kexin.com.cn Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Maximum (Peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Average forward current IO 100 * mA Maximum (Peak) forward current IFM 200 * mA Surge current (10ms) IFSM 1* A Power dissipation P 100 mW Junction temperature Tj 125 Storage temperature Tstg -55to+125 Operating Temperature Range Topr -40 to 100 *Unit Rating .Total Rating= Unit RatingX0.7 |
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