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MJD50 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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MJD50 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter www.kexin.com.cn NPN Epitaxial Silicon Transistor MJD47;MJD50 Features Load Formed for Surface Mount Application Straight Lead Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Symbol Rating Unit Collector-Emitter Voltage MJD47 350 V MJD50 500 V Collector-Emitter Voltage MJD47 250 V MJD50 400 V Emitter-Base Voltage VEBO 5V Collector Current (DC) IC 1A Collector Current (Pulse) ICP 2A Base Current IB 0.6 A Collector Dissipation (TC=25 ) 15 W Collector Dissipation (Ta=25 ) 1.56 W Junction Temperature TJ 150 Storage Temperature TSTG -65to150 PC VCBO VCEO Electrical Characteristics Ta = 25 unless otherwise noted Parameter Symbol Testconditons Min Typ Max Unit Collector-Emitter Sustaining Voltage * MJD47 250 V MJD50 400 V Collector Cut-off Current MJD47 VCE = 150V, IB =0 0.2 mA MJD50 VCE = 300V, IB =0 0.2 mA Collector Cut-off Current MJD47 VCE = 350, VEB =0 0.1 mA MJD50 VCE = 500, VEB =0 0.1 mA Emitter Cut-off Current IEBO VBE =5V, IC =0 1 mA VCE = 10V, IC = 0.3A 30 150 VCE = 10V, IC =1A 10 Collector-Emitter Saturation Voltage * VCE(sat) IC =1A, IB =0.2A 1 V Base-Emitter Saturation Voltage * VBE(sat) VCE = 10A, IC =1A 1.5 V Current Gain Bandwidth Product fT VCE =10V, IC =0.2A 10 MHz *Pulse Test: PW 300ìs, Duty Cycle 2% IC = 30mA, IB =0 DC Current Gain * VCEO(sus) ICEO ICES hFE |
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