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2SA1978 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SA1978
Description  PNP Eitaxial Silicon Transistor
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1978 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SA1978 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
PNP Eitaxial Silicon Transistor
2SA1978
Features
High fT (fT=5.5GHz TYP).
High gain |S21e|
2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA
High-speed switching characterstics
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-20
V
Collector-emitter voltage
VCEO
-12
V
Emitter-base voltage
VEBO
-3.0
V
Collector current
IC
-50
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -10V
-10
ìA
Emitter cutoff current
IEBO
VEB =-2V
-10
ìA
DC current gain
hFE
VCE =-10V,Ic=-15mA
20
40
100
Gain bandwidth product
fT
VCE = -10V ,Ic=-15mA
4.0
5.5
GHz
Collector capacitance
Cre*VCB = -10V , IE = 0 , f = 1MHz
0.5
1
pF
Insertion Power Gain
|S21e|2
Vce=-10V,Ic=-15mA,.f=1.0GHZ
8.0
10.0
dB
Noise Figure
NF
Vce=-10V,Ic=-3mA,.f=1GHZ
2.0
3
dB
*.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Marking
T93
Rank
FB
hFE
20
100


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