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CNY21 Datasheet(PDF) 4 Page - TEMIC Semiconductors |
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CNY21 Datasheet(HTML) 4 Page - TEMIC Semiconductors |
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4 / 10 page ![]() CNY21N TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 4 (10) Electrical Characteristics Tamb = 25°C Input (Emitter) Parameters Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 50 mA VF 1.25 1.6 V Breakdown voltage IR = 100 mA V(BR) 5 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Output (Detector) Parameters Test Conditions Symbol Min. Typ. Max. Unit Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 32 V Emitter collector breakdown voltage IE = 100 mA V(BR)ECO 5 V Collector emitter cut-off current VCE = 20 V, If = 0 ICEO 200 nA Coupler Parameters Test Conditions Symbol Min. Typ. Max. Unit AC isolation test voltage (RMS) f = 50 Hz, t = 1 s VIO 8.2 kV Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 5 mA, RL = 100 W fc 170 kHZ Coupling capacitance f = 1 MHz Ck 0.3 pF IC/IF IF = 10 mA, VCE = 5 V CTR 0.25 0.6 |
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