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2SC3513 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3513 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page ![]() SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Silicon NPN Epitaxial 2SC3513 Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V Emitter-base voltage VEBO 2V Collector current IC 500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 Marking Marking IS- Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC=10mA, IE =0 15 V Collector cutoff current ICEO VCE =10V, RBE = 1ìA Emitter cutoff current IEBO VEB =1V, IC =0 1 ìA Collector cutoff current ICBO VCB =12V, IE =0 1 ìA DC current transfer ratio hFE VCE =5V, IC = 20 mA 50 120 250 Collector output capacitance Cob VCB =5V, IE = 0, f = 1 MHz 1.0 1.5 pF Gain bandwidth product fT VCE =5V, IC =20mA 6.0 GHz Power gain PG VCE =5V, IC = 20 mA,f = 900 MHz 10 dB Noise figure NF VCE =5V, IC = 5 mA,f = 900 MHz 1.6 dB |
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