SMD Type

IC

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1

SMD Type

Transistors

-0.1

-0.1

-0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

-0.01

NPN Silicon Epitaxial Transistor

2SC3583

Features

NF 1.2 dBTYP.@f= 1.0 GHz

Ga 13 dB TYP. @f = 1.0 GHz

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to base voltage

20

V

Collector to emitter voltage

10

V

Emitter to base voltage

1.5

V

Collector current

65

mA

Total power dissipation

200

mW

Junction temperature

150

Storage temperature range

-65to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

1.0

ìA

Emitter cutoff current

1.0

ìA

DC current gain *1

50

100

250

Gain bandwidth product

9

GHz

Feed-Back Capacitance

Cre *2

0.35

0.9

pF

Insertion Power Gain

|

11

13

dB

Maximum Available Gain

MAG

15

dB

Noise Figure

NF

1.2

2.5

dB

*1.Pulse Measurement PW

350ìs, Duty Cycle

2%

*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

Marking

R33

R34

R35

Rank

R33/Q

R34/R

R35/S

50

100

80

160

125

250