SMD Type

IC

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1

SMD Type

Transistors

-0.1

-0.1

-0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

-0.01

NPN Silicon Epitaxial Transistor

2SC3585

Features

NF 1.8 dB TYP. @f = 2.0 GHz

Ga9dB TYP. @f = 2.0GHz

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to base voltage

20

V

Collector to emitter voltage

10

V

Emitter to base voltage

1.5

V

Collector current

35

mA

Total power dissipation

200

mW

Junction temperature

150

Storage temperature

-65to+150

Marking

R43

R44

R45

Rank

R43/Q

R44/R

R45/S

50

100

80

160

125

250

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

1.0

ìA

Emitter cutoff current

1.0

ìA

DC current gain

50

100

250

Gain Bandwidth Product

fT

10

GHz

Feed-Back Capacitance

Cre *2

0.3

0.8

pF

Insertion Power Gain

2

6.0

8.0

dB

Maximum Available Gain

MAG

10

dB

Noise Figure

NF

1.8

3.0

dB

*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

*1. Pulse Measurement PW

350ìs, Duty Cycle

2%