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2SC3663 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SC3663
Description  NPN Epitaxial Silicon Transistor
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC3663 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC3663 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
NPN Epitaxial Silicon Transistor
2SC3663
Features
Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP. @VCE =1V, IC = 250 PA, f = 1.0 GHz
GA = 3.5 dB TYP. @VCE =1V, IC = 250 PA, f = 1.0 GHz
Ideal for battery drive of pagers, compact radio equipment cordless phones, etc.
Gold electrode gives high reliability.
Mini mold package, ideal for hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8V
Emitter to base voltage
VEBO
2V
Collector current
IC
5mA
Total power dissipation
PT
50
mW
Junction temperature
Tj
150
Storage temperature range
Tstg
-65to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector Cut-off Current
ICBO
VCB =5V, IE =0
0.1
ìA
Emitter Cut-off Current
IEBO
VEB =1V, IC =0
0.1
ìA
DC Current Gain
hFE
VCE =1V, IC = 250 PA, pulse
50
100
250
Gain Bandwidth Product
fT
VCE =1V, IC =1mA
4
GHz
Insertion Power Gain
|S21e|
2
VCE =1V, IC = 1 mA, f = 1 GHz
4.0
6.5
dB
Maximum Available Gain
MAG
VCE =1V, IC = 1 mA,f= 1 GHz
12.5
dB
Noise Figure
NF
VCE =1V, IC = 250 ìA, f = 1.0 GHz
3.0
4.5
dB
Associated Power Gain
GA
VCE =1V, IC = 250 ìA, f = 1.0 GHz
3.5
dB
Collector Capacitance
C
VCB =1V, IE = 0, f = 1.0 MHz
0.4
0.6
pF
Marking
Marking
R62


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