2SC3357 datasheet(1/1 Pages) KEXIN

Part #	2SC3357

Description	NPN Silicon RF Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

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Transistors

SMD Type

NPN Silicon RF Transistor

2SC3357

Features

Low Noise and High Gain

NF = 1.1 dB TYP., Ga =7.5 dB TYP. @VCE =10V,

IC = 7 mA,f= 1.0 GHz

NF = 1.8 dB TYP., Ga =9.0 dB TYP. @VCE =10V,

IC =40mA, f = 1.0GHz

High power gain : MAG = 10 dB TYP. @ IC =40mA, f = 1GHz

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

20

V

Collector-emitter voltage

VCEO

12

V

Emitter-base voltage

VEBO

3.0

V

Collector current

IC

100

mA

Total power dissipation

PT*1.2

W

Junction temperature

Tj

150

Storage temperature

Tstg

-65to+150

Thermal Resistance

Rth(j-a)*

62.5

/W

* mounted on 16 cm

2 X 0.7 mm(t) Ceramic Substrate

hFE Classification

Marking

RH

RF

RE

Rank

RH

RF

RE

hFE

20

100

80

160

125

250

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB =10V,IE=0

1.0

A

Emitter cutoff current

IEBO

VEB =1.0V,IC=0

1.0

A

DC current gain

hFE *1

VCE =10V,Ic=20mA

50

120

250

Insertion Power Gain

|S21e|

2

VCE =10V, IC =20mA, f = 1.0GHz

9

dB

VCE =10V, IC = 7 mA, f = 1.0 GHz

1.1

dB

VCE =10V, IC = 40 mA, f = 1.0 GHz

1.8

3.0

dB

Output Capacitance

Cob

VCB =10V, IE = 0, f = 1.0 MHz

0.65

1.0

pF

Transition frequency

fT

VCE = 10V ,Ic=20mA

6.5

GHz

*1 Pulse Measurement PW

350 ms, Duty Cycle

2%

*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.

NF

Noise Figure

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