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KC856S Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # KC856S
Description  PNP General Purpose Double Transistor
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KC856S Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  KC856S Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
www.kexin.com.cn
1
SOT-363
Unit: mm
1.3+0.1
-0.1
0.65
0.1+0.05
-0.02
0.3+0.1
-0.1
2.1+0.1
-0.1
1E1
2B1
3C2
4E2
5B2
6C1
PNP General Purpose Double Transistor
KC856S(BC856S)
Features
Two transistors in one package
Reduces number of components and board space
No mutual interference between the transistors.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-65
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current - Continuous
IC
-100
mA
Power Dissipation
PD
200
mW
Thermal Resistance, Junction to Ambient
R JA
416
/W
Operating and Storage Junction Temperature Range
TJ,Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
VCB =- 30 V, IE =0
-15
nA
VCB =- 30 V, IE =0,TA =150
-5.0
A
Emitter- cutoff current
IEBO
IC=0,VEB=-5V
-100
nA
DC Current Gain
hFE
IC =-2.0mA, VCE =-5.0V
110
IC =-10 mA,IB =- 0.5 mA
-100
mV
IC =-100mA, IB =- 5.0 mA
-300
mV
Base-Emitter Saturation Voltage
VBE(sat)
IC =-10 mA,IB=-0.5mA
700
m V
Output Capacitance
Cob
VCB = -10 V, f = 1.0 MHz
2.5
pF
Transistion frequency
fT
IC =-10 mA,VCE = -5.0V,f = 100 mHz
100
MHz
ICBO
Collector-Cutoff Current
VCE(sat)
Collector-Emitter Saturation Voltage
Marking
Marking
5F


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