2SD1664 datasheet(1/3 Pages) KEXIN

Part #	2SD1664

Description	Medium Power Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

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Medium Power Transistor

2SD1664

Features

Low VCE(sat)

Compliments to 2SB1132

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

32

V

Emitter-Base Voltage

VEBO

5V

Collector Current

(DC)

1

A

PW=20ms, duty=1/2

2

A

Collector Power Dissipation

PC *0.5

W

Jumction temperature

Tj

150

Storage temperature Range

Tstg

-55to+150

* mounted on a 40x40x0.7mm ceramic board.

IC

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector Cut-off Current

ICBO

VCB = 20V , IE =0

0.5

ìA

Emitter Cut-off Current

IEBO

VEB =4V , IC =0

0.5

ìA

Collector-base Breakdown Voltage

V(BR)CBO IC = 50uA , IE =0

40

V

Collector-emitter Breakdown Voltage

V(BR)CEO IC =1mA , IB =0

32

V

Emitter-Base Breakdown Voltage

V(BR)EBO IE = 50uA

5

DC Current Gain

hFE

VCE =-3V , IC = -0.1A

82

390

Collector-emitter Saturation Voltage

VCE(sat) IC = 500mA , IB = 50mA

0.15

0.4

V

Transition Frequency

fT

VCE =5V , IE = -50mA , f = 100MHz

150

MHz

Collector Output Capacitance

Cob

VCB = 10V , IE = 0 , f = 1MHz

15

pF

hFE Classification

Marking

Rank

P

Q

R

hFE

82

180

120

270

180

390

DA

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2SD1664 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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