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2SC3617 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SC3617
Description  NPN Silicon Epitaxia
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC3617 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
Transistors
1
www.kexin.com.cn
NPN Silicon Epitaxia
2SC3617
Features
World standard miniature package.
High hFE hFE=800 to 1600.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
300
mA
Collector current (Pulse)*
ICP
500
mA
Total power dissipation
PT
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
*PW
10ms,duty cycle
50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 50V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB = 10V, IC=0
100
nA
VCE =5.0V , IC = 100mA
800
3200
VCE =5.0V , IC = 300mA
640
Collector-emitter saturation voltage *
VCE(sat) IC = 100mA , IB = 1.0mA
0.12
0.13
V
Base-emitter saturation voltage *
VBE(sat) IC = 100mA , IB = 1.0mA
0.7
1.2
V
Gain bandwidth product
fT
VCE =5.0V , IE = -50mA
150
220
MHz
Output capacitance
Cob
VCB = 10V , IE = 0, f = 1.0MHz
8.0
pF
*. PW
350ìs,duty cycle
2%
hFE
DC current gain *
hFE Classification
Marking
TM
TL
TK
hFE
800
1600
1200
2400
2000 3200


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