2SC3650 datasheet(1/1 Pages) KEXIN

Part #	2SC3650

Description	NPN Epitaxial Planar Silicon Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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NPN Epitaxial Planar Silicon Transistor

2SC3650

Features

High DC current gain (hFE=800 to 3200).

Low collector-to-emitter saturation voltage

(VCE(sat)

0.5V).

Large current capacity (IC=1.2V).

Very small size making it easy to provide highdensity,

small-sized hybrid IC’

s.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

30

V

Collector-emitter voltage

VCEO

25

V

Emitter-base voltage

VEBO

15

V

Collector current

IC

1.2

A

Collector current (pulse)

Icp

2A

Collector dissipation

PC

500

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB=20V, IE=0

0.1

ìA

Emitter cutoff current

IEBO

VEB=10V, IC=0

0.1

ìA

DC current gain

hFE

VCE=5V, IC=500mA

800

1500

3200

Gain bandwidth product

fT

VCE=10V, IC=50mA

220

MHz

Output capacitance

Cob

VCB=10V, f=1MHz

17

pF

Collector-emitter saturation voltage

VCE(sat) IC=500mA, IB=10mA

0.12

0.5

V

Base-emitter saturation voltage

VBE(sat) IC=500mA, IB=10mA

0.85

1.2

V

Collector-base breakdown voltage

V(BR)CBO IC=10ìA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA, RBE=

25

V

Emitter-base breakdown voltage

V(BR)EBO IE=10ìA, IC=0

15

V

Marking

CF

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2SC3650 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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