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2SC3736 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SC3736
Description  NPN Silicon Epitaxia
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC3736 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC3736 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
www.kexin.com.cn
NPN Silicon Epitaxia
2SC3736
Features
High speed,high voltage switching.
Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5V
Collector current
IC
1A
Collector current (Pulse)*
ICP
2A
Total power dissipation
PT
2W
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
*PW
10ms,duty cycle
50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =45V, IE=0
0.5
nA
Emitter cutoff current
IEBO
VEB =4V, IC=0
0.5
nA
DC current gain *
hFE
VCE =10V , IC =50mA
60
200
Collector-emitter saturation voltage *
VCE(sat) IC = 500mA , IB = 50mA
0.17
0.4
V
Base-emitter saturation voltage *
VBE(sat) IC = 500mA , IB =50mA
0.9
1.2
V
Gain bandwidth product
fT
VCE =10V , IE = -100mA
300
380
MHz
Output capacitance
Cob
VCB =10V , IE = 0, f = 1.0MHz
6.7
10
pF
Turn-on time
ton
20
40
ns
Storage time
tstg
55
80
ns
Turn-off time
toff
72
100
ns
*. PW
350ìs,duty cycle
2%
IC = 500mA , IB1 =IB2 =50mA
hFE Classification
Marking
OL
OK
hFE
60
120
100
200


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