2SD1001 datasheet(1/1 Pages) KEXIN

Part #	2SD1001

Description	NPN Silicon Epitaxial Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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NPN Silicon Epitaxial Transistor

2SD1001

Features

World standard miniature package:SOT-89.

High collector-emitter voltage.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

80

V

Collector-emitter voltage

VCEO

80

V

Emitter-base voltage

VEBO

5V

Collector current (DC)

IC

300

mA

Collector Current (pulse) *

IC

500

mA

Total power dissipation

PT

2.0

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

* Pulse Test PW

10ms, Duty Cycle

50%.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB =80V, IE = 0 A

100

nA

Emitter cutoff current

IEBO

VEB =5.0 V, IC = 0 A

100

nA

VCE =1.0 V, IC = 50 mA

90

200

400

VCE =2.0 V, IC = 300 mA

30

80

Collector saturation voltage *

VCE(sat) IC = 300 mA, IB = 30 mA

0.15

0.6

V

Base saturation voltage *

VBE(sat) IC = 300 mA, IB = 30 mA

0.86

1.2

V

Base-emitter voltage *

VBE

VCE =6.0 V, IC = 10 mA

600

645

700

mV

Gain bandwidth product

fT

VCE =6.0 V, IE = -10 mA

140

MHz

Output capacitance

Cob

VCB =6V, IE = 0, f = 1.0 MHz

70

pF

* Pulsed: PW

350 ìs, duty cycle

2%

DC current gain *

hFE

hFE Classification

Marking

EM

EL

EK

hFE

90

180

135

270

200

400

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2SD1001 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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