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2SD1963 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SD1963
Description  Power Transistor
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1963 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD1963 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
www.kexin.com.cn
Power Transistor
2SD1963
Features
Low saturation voltage.
Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6V
Collector current
IC
3A
Collector power dissipation
PC
0.5
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
50
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA
20
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
6
V
Collector cutoff current
ICBO
VCB=40V
0.5
ìA
Emitter cutoff current
IEBO
VEB=5V
0.5
ìA
DC current transfer ratio
hFE
VCE=2V, IC=0.5A
180
560
Collector-emitter saturation voltage
VCE(sat) IC=1.5 A, IB=0.15A
0.25
0.45
V
Output capacitance
fT
VCE=6V, IE= -50mA, f=100MHz
150
MHz
Transition frequency
Cob
VCB=20V, IE=0A, f=1MHz
35
pF
hFE Classification
Marking
Rank
R
S
hFE
180
390
270
560
DG


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