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FMMTL619 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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FMMTL619 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() www.kexin.com.cn 2 SMD Type IC SMD Type Transistors FMMTL619 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 100 210 V Collector-emitter breakdown voltage V(BR)CEO IC=5mA* 50 70 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 58.5 V Collector-base cut-off current ICBO VCB=40V 10 nA Emitter-base current IEBO VEB=4V 10 nA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA* IC=250mA, IB=10mA* IC=500mA, IB=25mA* IC=1.25A, IB=125mA* 24 60 100 195 45 100 180 330 mV Base-emitter saturation voltage VBE(sat) IC=1.25A, IB=125mA* 1020 1100 mV Base-emitter ON voltage VBE(on) IC=1.25A, VCE=2V* 895 1000 mV DC current gain hFE IC=10mA, VCE=5V IC=200mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 200 300 200 100 30 400 450 400 230 50 Current-gain-bandwidth product fT IC=50mA, VCE=10V f=100MHz 180 MHz Output capacitance Cobo VCB=10V, f=1MHz 68 pF Turn-on time t(on) IC=1A, VCC=10V 182 ns Turn-off time t(off) IB1=-IB2=10mA 379 ns * Pulse test: tp 300 ìs; d 0.02. Marking Marking L69 |
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