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2SC4173 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SC4173
Description  NPN Silicon Epitaxia
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC4173 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC4173 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
1 Emitter
2 Base
3 Collector
NPN Silicon Epitaxia
2SC4173
Features
High gain bandwidth product: fT=200MHz min.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5V
Collector current
IC
500
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =40V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB =4V, IC=0
100
nA
DC current gain *
hFE
VCE =1V , IC = 150mA
75
150
300
Collector-emitter saturation voltage *
VCE(sat) IC =500mA , IB = 50mA
0.25
0.75
V
Base-emitter saturation voltage *
VBE(sat) IC =500mA , IB = 50mA
1.0
1.2
V
Gain bandwidth product
fT
VCE =10V , IE = -20mA
200
400
MHz
Output capacitance
Cob
VCB =10V , IE = 0 , f = 1.0MHz
3.5
8.0
pF
Turn-on time
ton
VCC = 30V ,
30
ns
Storage time
tstg
IC = 150mA ,
150
ns
Turn-off time
toff
IB1 =-IB2 = 15mA
180
ns
*. PW
350ìs,duty cycle
2%
hFE Classification
Marking
B12
B13
B14
hFE
75
150
100 200
150 300


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